Performance analysis of device characteristics in Negative Capacitance Field Effect Transistor

With the advancement in technology and new insights of MOSFET fabrications, power consumption in VLSI circuits has been optimized to a greater extent. In this work, a comparative analysis is done for the intervention of negative capacitance on baseline switching element i.e. MOSFET. Negative capacitance acts as a transformer, that steps up the gate-source voltage ($V_{GS}$) of field effect transistor thus maintaining a high $I_{on}$ current. A thin layer of $Fe$ material is added with the gate stack of MOSFET to form a series combination of Ferroelectric capacitor ($C_{FE}$) and dielectric capacitor. Device characteristics have been plotted and sub-threshold swing (SS) has shown remarkable improvement by the integration of negative capacitance effect as compared to baseline MOSFET. Steeper SS of 50.75 mV/dec is achieved in case of NCFET. This work indicates that NCFET has a great potential to replace the conventional MOSFET device in low power circuits.