Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs

In this work, multi-finger current aperture vertical electron transistors (CAVETs) are fabricated with co-integrated high electron mobility transistors (HEMTs). The devices are realized by Mg-ion implantation and metalorganic chemical vapor deposition (MOCVD) regrowth. The intrinsic CAVET design is optimized for robust device performance and applied on multi-finger devices having a total gate periphery of
${W}_{{\text {G}}} =13.5$
mm and
${W}_{{\text {G}}} =77$
mm. Mappings of the transfer characteristics revealed reliable turn-off behavior demonstrating the suitability of the intrinsic device layout. The largest CAVETs revealed a total ON-state resistance of
${R}_{ \mathrm{\scriptscriptstyle ON}} = 1.67\,\,\Omega $
and a maximum drain current of
${I}_{{\text {D},\text {MAX}}} =20.3$
A at
${V}_{\text {GS}} = {3}$
V. A pulse robustness of
${P}_{\text {PULS}} =976$
W at
${V}_{\text {DS}} =50$
V and a pulsewidth of 500
$\mu \text{s}$
is shown without thermal destruction. Additionally, HEMTs are co-integrated on-chip. This combination of HEMTs and reliable large area CAVETs enables the design of high-performance, monolithically integrated GaN power circuits (GaN power ICs) based on the CAVET technology.