A 68% PAE, 800-W, L-Band Internally Matched GaN Amplifier

In this paper, an 800W, L-Band internally matched power amplifier has been developed. Taiwan win $0.45\mu \mathrm{m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) technology is used and the total gate width of the chip is 115.2mm. The internally matched amplifier has demonstrated the output power of over 800W, power density of 10W/mm and the power gain of 15dB across 1.2GHz to 1.4GHz with the voltage of 50V, the power added efficiency is between 59% and 68% under the pulse condition at a duty of 10% with a pulse of width of $100\mu \mathrm{s}$.