Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI

This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) technology. 3D TCAD and ESD testing confirm that the Sudoku DTSCR ESD structures can dramatically improve the ESD area efficiency. Transmission line pulse (TLP) measurement shows a high ESD area efficiency of ~6.47mA/
$\mu \text{m}^{2}$
for Sudoku-DTSCR, ~64.6% improvement over traditional finger-DTSCR structure. A scalability model was derived as design guidelines for optimizing Sudoku DTSCR ESD protection array structures.