Si-Based Infrared Detector Using Organic Nano-Dot Array

Silicon-based infrared photodetector is proposed using an organic nano-dot array covered with an Au thin film. The nano-dots were self-assembled structures composed of crystalline CuPc and PTCDA organic semiconductors, and they enhanced the absorption of the incident infrared light. The annealing process at the CuPc and PTCDA deposition formed these semiconductor materials to be a nano-dot array shape. The Au-coated nano-dots presented broadband reflectance decrease in the near- to mid-infrared region. The Arrhenius plot investigation revealed that the proposed photodetector had 0.4-0.43 eV activation energy, a sub-Si-bandgap energy barrier. The photodetection experiments in the near-infrared region presented the proposed photodetector discriminated on and off of 2.07-
$\mu \text{m}$
-long super continuum light. In addition, band-pass filtered emission from a black body cavity with a wavelength of
$3.05~\mu \text{m}$
could be measured. Since the derivation of the activation energy and the cut-off wavelength showed a good agreement, the organic semiconductor generated a carrier at the photodetection. A possible detection mechanism was thus attributed to carrier excitations at an interface between organic semiconductors, CuPc and PTCDA. The proposed structure contributes to fabricate mid-infrared silicon-based photodetectors with high light absorption performance.