Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode

In this work, a p-GaN/AlGaN/GaN hybrid anode diode (HAD) temperature sensor was fabricated by using hydrogen plasma treatment. The zero-temperature coefficient (ZTC) is about 0.7 V from the
${I}$
–
${V}$
characteristics measured at various temperatures. At the forward region below the ZTC bias point, the anode voltage (
${V}_{{\mathrm {A}}}$
) at a specific anode current density (
${I}_{{\mathrm {A}}}$
) decreases linearly with the increase of temperature, resulting in a sensitivity ranging from 1.64 mV/K (10
⁻⁵
mA/mm) to 0.69 mV/K (10
⁻²
mA/mm). The leakage current at the reverse bias also presents a temperature-dependent behavior with a sensitivity ranging from 16.76 mA/K (−100 V) to 27.94 mA/K (−5 V). The experimental results can be interpreted well by the two-dimensional variable range hopping model.