WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

A layered polycrystalline WS
₂
film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its
$p$
MISFET is successfully demonstrated with TiN/HfO
₂
top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS
₂
film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA.
$I$
–
$V$
characteristics with
$p$
-type operation are confirmed in WS
₂
MISFETs with a maximum field effect mobility of
$1.5\times10$
⁻²
cm
²
V
⁻¹
s
⁻¹
. Therefore, our film-formation method is a promising candidate for
$p$
MOSFETs in CMOS circuits.