Investigations of an Influence of the Assembling Method of the Die to the Case on Thermal Parameters of IGBTs

This article presents the results of investigations illustrating the influence of the method of assembling the die of the insulated gate bipolar transistor (IGBT) to the base of the TO-220 lead frame on its thermal parameters. The properties of the tested semiconductor die and the methods of assembling it in the case are presented. The measurement method used here, belonging to the indirect electrical methods, is carefully described. The obtained measurement results are shown and discussed to indicate which of the assembly methods of the die attachment to the case ensures the most effective heat dissipation. The results obtained for the tested devices point to soldering, and they are comparable with the results of measurements obtained for a commercial IGBT mounted in the same case.