A Dual-Band and Dual-State Doherty Power Amplifier Using Metal-Integrated and Substrate-Integrated Suspended Line Technology

In this article, a novel design method of dual-band and dual-state (DBDS) Doherty power amplifier (DPA) is proposed. Considering the actual parasitic parameters, the DPA can be designed by using the impedance transformation of saturation and back-off points at dual frequency bands of DBDS as well as second harmonic matching. The DBDS DPA for dual-band (DB) 5G application, i.e., 3.4 and 4.9 GHz band are designed and implemented, for the first time, by using metal-integrated and substrate-integrated suspended line (MI-SISL) technology, which has advantages of high performance and self-packaging. The fabricated DBDS DPA achieves the measured 44 and 43.2 dBm saturated power at 3.4 and 4.9 GHz bands, respectively. For the 3.4 and 4.9 GHz bands, the measured drain efficiency (DE) is 70.7% and 70.4% at peak power levels and 38% and 42% at a 6-dB output back-off, respectively. When driven by a 20- and 100-MHz modulated signal with 6-dB peak-to-average power ratio (PAPR), the adjacent channel leakage ratio is better than −27 dBc at operating frequencies. The average output power of 38 and 37 dBm with an average efficiency of 37.9% and 40.9% is achieved at 3.4 and 4.9 GHz, respectively.