Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ Memristors—Part II: Physics-Based Model

In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiO
_x
-based memristors, both switching and static. We show that the current–voltage (
${I}$
–
${V}$
) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static
${I}$
–
${V}$
compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static
${I}$
–
${V}$
model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.