Spatial Investigation and Analysis of PID Shunting in Crystalline Silicon PV Module

Potential-induced degradation shunting (PID-s) rapidly develops within a p-type crystalline silicon PV module and detrimentally impacts its performance. This work aims to study the spatial progression of PID-s within mono and multi-crystalline silicon module. PID-s treatment on the test modules was conducted in a climatic chamber. For the investigation of PID-s, pre and post-test images were capture using electroluminescence imaging and dark lock-in thermography. Experimental results show that cell edges and corners are more prone to PID-s formation. Also, pre-existing defects such as recombination centers, cracks play some role in PID-s progression. The performance of the spatial imaging techniques in PID-s investigation is also discussed.