UHF Wideband GaAs MMIC LNA

A wideband room temperature UHF-band MMIC low noise amplifier based on 0.15 μm pHEMT GaAs technology is presented. The amplifier achieves about 30 dB gain over a five-octave frequency range from 300 MHz to 1.5 GHz with minimum noise of 0.55 dB at room temperature. The two-stage amplifier utilizes an on-chip gain equalizer at the output and has a gain flatness of 3 dB over the 5:1 band in the fully packaged enclosure.