Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se2 Thin Film

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage co-evaporation process on molybdenum coated glass substrate. A vapor treatment was done in between the second and third stage by flashing CuCl
2
for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.