Optimization of dual ion beam sputtered MQWs for solar cell

In this work, fabrication of CdZnO/ZnO-based multiple quantum wells (MQWs) by dual ion beam sputtering (DIBS) is optimized based on different deposition temperature and halt time between deposition of consecutive layers to achieve improved quality deposition of well and barrier layers for solar cell application. The effect of deposition temperature and halt time are analyzed and discussed systematically by secondary ion mass spectroscopy (SIMS) and high-resolution transmission electron microscopy (HR-TEM). The results show that, MQWs structure fabricated at 100 °C as deposition temperature and having halt time of 30 min, shows better formation of well and barrier layers compared to other deposition temperatures and halt time.