Perovskite Inverted Solar Cells: Impact of Hole Transport Layer and Anti-Solvent Ejection Time

This paper focuses on the development of PIN devices using a mixed cations and anions perovskite recently developed for stable standard NIP architectures. The inverted perovskite solar cells seem particularly interesting for highly efficient perovskite-silicon tandem cell applications. The hole transporting material was here varied. It plays a crucial role as perovskite’s sub-layer in the PIN setups. The cells were optimized varying the Anti-Solvent Ejection time (t
ASE
). The mixed perovskite FA
0.94
Cs
0.06
Pb(I
0.88
Br
0.12
)
3
has been successfully deposited on PEDOT:PSS, PTAA and TFB polymeric materials. The specific adjustment of the t
ASE
allowed us to reach PIN-photovoltaic performances comparable to the NIP architectures.