Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se2 Semiconductor Thin Films

The recrystallization by indium chloride of Cu(In,Ga)Se
2
thin films deposited by co-evaporation at 350°C was studied. The process of recrystallization consists of the post-deposition treatment of CIGS sample by InCI
3
vapor for 30 minutes with emphasis on grain growth. The treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.