Nickel-based CMOS-compatible contacts on p-In0.53Ga0.47 As for III-V / silicon hybrid lasers

Nickel-based metallization are envisioned for the p-contact integration of III-V / silicon hybrid lasers on a 300 mm platform. The electrical and physical characteristics of Ni
0.9
Pt
0.1
and Ni thin films on In
0.53
Ga
0.47
As layers have been studied. For the first time, the impact of the thermal budget of the process integration and laser operations on the contact integrity have been investigated. Results have shown that in the case of the Ni
0.9
Pt
0.1
/ p-In
0.53
Ga
0.47
As system, with a rapid thermal annealing between 350 and 450 °C for 60 s applied after metal deposition, promising contact resistivities have been extracted (low 10
^–5
- high 10
^–6
Ω.cm
²
) along with a good electrical stability after process integration and laser operations. The Ni / p-In
0.53
Ga
0.47
As system have exhibited lower contact resistivities (low 10
^–6
- high 10
^–7
Ω.cm
²
) granted a rapid thermal annealing between 400 and 500 °C after metal deposition. A strong electrical stability after integration steps and laser operations has also been evidenced. Results suggest that the Ni / p-In
0.53
Ga
0.47
As system constitutes the most promising option for p-contact integration.