Reliability and magnetic immunity of reflow-capable embedded STT-MRAM in 16nm FinFET CMOS process

We demonstrate the reliability and magnetic immunity of STT-MRAM embedded in 16nm FinFET CMOS process. The technology supports endurance cycles up to 10
⁵
for wide temperature range from -40°C to 125°C with low bit error rate and passes 10
⁶
cycles at the worst temperature case of -40°C. Data retention sustains three solder-reflow cycles and up to 10 years with less than 1ppm error rate at 234°C. Read disturb error rate is less than 10
^-20
per read. Magnetic immunity of standby and active mode can reach 550Oe for 10 years 1ppm error rate and 800Oe for 0.1ppm error rate per write at 125 °C, respectively.