Advancing Monolayer 2D NMOS and PMOS Transistor Integration From Growth to van der Waals Interface Engineering for Ultimate CMOS Scaling

2D-material channels enable ultimate scaling of MOSFET transistors and will help Moore’s Law Scaling for decades. We demonstrate the state of both n and p-MOSFETs using monolayer TMD channels of sub-1nm thickness and manufacturable CVD, MBE or seeded growth. NMOS devices on transferred MBE MoS
2
using novel contact metal show low variation, one of the lowest reported contact resistances (R
c
) of 0.4 kΩ.μm, low hysteresis, and good subthreshold slope (SS) of 77 mV/dec. PMOS devices using CVD WSe
2
show 89 mV/dec SS, best reported for PMOS on grown films, but on-current remains behind NMOS. Transfer-free, area-selective WS
2
transistors achieve 10 μA/μm on-current, highest reported on WS
2
using seeded growth. A new capacitance method is shown to monitor 2D material contact interface quality. Gate-oxide interface engineering through metal seeding and ALD demonstrates that a single 2D channel material can selectively make PMOS or NMOS transistors, alike Si CMOS.