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First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm | IEEE Conference Publication | IEEE Xplore

First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm


Abstract:

We report the first realization of oxide semiconductor based nanowire field-effect transistor (NW-FET) having ultra-scaled amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) na...Show More

Abstract:

We report the first realization of oxide semiconductor based nanowire field-effect transistor (NW-FET) having ultra-scaled amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) nanowire channel (width down to ~20 nm) enabled by a novel digital etch technique. A device with ~25 nm nanowire width (WNW) and 100 nm channel length (LCH) achieves the highest peak extrinsic transconductance (Gm,ext) of 612 μS/μm at VDS = 2 V (456 μS/μm at VDS = 1 V) among all IGZO-based transistors, and the highest on-state current (Ion) of 620 μA/μm at VDS = 1 V and VGS – VTH = 2 V among all oxide semiconductor based transistors with top gate structure. Ion exceeds 1300 μA/μm at higher bias voltages. In addition, a peak intrinsic transconductance (Gm,int) of 915 μS/μm at VDS = 2 V (609 μS/μm at VDS = 1 V) were realized.
Date of Conference: 13-19 June 2021
Date Added to IEEE Xplore: 11 August 2021
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Conference Location: Kyoto, Japan

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