Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array

Low voltage selectors are critical for low power operation of high density non-volatile memories. In this work, selectors based on arsenic free chalcogenide materials are demonstrated with record high endurance over 10
¹¹
cycles together with threshold voltage ~1.3V and leakage current ~5nA. The enhanced endurance is attributed to suppression of phase separation with more stable amorphous network by proper dopants.