Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (>100 dB) and Ultra-low Saturation Voltage (<0.1 V) by Source Engineering

For the first time, we demonstrate an excellent analog performance monolayer MoS
2
transistor with Schottky-source-gated structure operating in sub-threshold region. By precise-controlling the source injection barrier, this device exhibits pinch-off regions occurring both at source and drain with ultra-high output impedance (>10
¹³
Ω) and ultra-low saturation voltage (<0.1V). By this design, record-high intrinsic gain (>100 dB) is achieved in this device among all the transistors reported so far. This work provides a universal high-performance transistor solution for low power analog application.