First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching

The 8-stacked Ge
0.75
Si
0.25
nanosheets and the 7-stacked Ge
0.95
Si
0.05
nanowires are realized by H
2
O
2
wet etching. High inter-channel uniformity of the 8-stacked Ge
0.75
Si
0.25
is demonstrated. Thanks to small transport effective mass (m
t
) and large DOS effective mass (m
DOS
) in L
4
valley, and low R
S/D
/R
total
, high performance of the 7-stacked Ge
0.95
Si
0.05
is demonstrated. The record I
ON
=110μA per stack (4100μA/μm per channel footprint) at V
OV
=V
DS
=0.5V and high G
m,max
=340μS (13000μS/μm) at V
DS
=0.5V are achieved among reported Ge/GeSi 3D nFETs.