A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs

A compact model approach to enhance the accuracy and facilitate the parameter extraction of trapping models is presented. The proposed model replaces the conventional superposition of discrete trapping time constants by a Gaussian distribution of a particular range of time constants. This approach reflects the physically non-constant energy levels of the trap distribution of surface, interface, and bulk traps. Also, we propose a new equivalent circuit that takes the time-dependent charging and discharging of traps into account. We show that our model reduces the model complexity by 52%. The model is verified against dynamic ON-state resistance (
${\mathrm {R}}_{\text {DS}, \mathrm{\scriptscriptstyle ON}}$
) measurements of a commercial 100-V gallium-nitride (GaN) power transistor in soft-switching operation.