InAs Islands Formation on the InP(001) During High- Temperature Annealing in an As Flux

The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the $[1 \overline{1} 0]$ direction. The height and density of InAs areas increases with an increase in the annealing temperature.