Selective Area Deposition of Vanadium Dioxide Films by MOCVD

In the present study, the possibility of a selective MOCVD growth of vanadium dioxide on silicon substrates locally coated with aluminum is demonstrated. By diluting the precursor flow with an inert gas, it was possible to achieve a situation in which the growth of vanadium dioxide proceeded only on the surface of aluminum, with its complete absence from the rest of the surface. It is shown that the M -phase of vanadium dioxide grows on aluminum films.