Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors

In this work, we present a new fabrication methodology to enable high-performance thin-film transistor (TFT) with submicron channel length. The method can exceed the resolution limit of a conventional photolithography compatible with large-area substrates such as a glass or a plastic. The lift-off and back-channel etching techniques were employed to delineate the channel in the bottom-gate top-contact configuration. The Al-doped InZnSnO TFTs with 0.8 μm channel length were successfully fabricated. Field-effect mobility of over 50 cm
²
/Vs, subthreshold swing of 90 mV/dec, on/off current ratio of > 10
¹⁰
, and turn-on voltage of -0.24 V were obtained. Considering the compatibility with the current manufacturing process and facility, we expect that the method can be incorporated in an easy and cost-effective way into the TFT array for high-performance large-area electronics.