The Novel Structure to Enhancement Ion/Ioff Ratio Based on Field Effect Diode

This paper proposes a new structure named a Side Contact lateral Doping Field Effect Diode (SLFED) to overcome the short channel effects of a regular field effect diode (FED). The fabrication of this new structure is simple that can be fabricated by the standard CMOS process technology, and it offers good electrical characteristics. Furthermore, a comprehensive analysis of FEDs has presented. Our results show that the calculated I
_on
/I
_off
ratio is several orders of magnitude larger than of the regular FED. For simulating the structures, we have applied semiconductor device simulation tools.