Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.