Hysteresis analysis of MoS2 Field Effect Transistors

We analyze hysteresis effects in experimental molybdenum disulfide field effect transistors (MoS
2
-FETs) by numerical simulations. The energy profile, concentration and charge and discharge times of acceptor interface traps are determined from an iterative numerical platform that exploits a measurement methodology based on careful control of timing and bias conditions, which progressively activate the traps.