Statistical analysis of characteristics variability in bulk MOSFETs at Cryogenic Temperature

Characteristics variability of bulk MOSFETs was measured at room temperature (RT) and low temperatures (LT) and compared. It is newly found that the DIBL variability increases at LT. It is also found that VTH deference between RT and LT
$(\Delta \boldsymbol{V}_{\mathbf{TH}})$
follows the normal distribution. The reasons for these phenomena are discussed.