Reliability Issues of Half-Selected Cells in Resistive Random Access Memory Array Integrated with 14nm FinFET

In this paper, the reliability issues of the half-selected cells are investigated in the 1TIR memory array consisting of resistive random access memory (RRAM) and FinFET on 14nm technology node. The impact of electrical stress is discussed under three modes. The leakage current and the saturation current of the transistor would increase and decrease respectively after the stress testing. Considering the both the operation voltage and current of the RRAM, the degradation cannot be neglected. The RRAM cell with ultralow operation voltage and current is required for the practical applications embedded in sub-14-nm technologies. Keywords: OxRRAM, FinFET, stress test, reliability