Experimental characterizations on TID Radiation Impacts in Charge-trap 3D NAND Flash Memory

To understand the possible potentials of large capacity NAND flash memory chips in harsh environment applications, in this work, the impacts of total ionizing dose (TID) in charge-trap (CT) 3D NAND are characterized experimentally. Typical floating-gate (FG) 2D NAND chips are also tested for comparisons. Different from its FG 2D counterpart, error bits in raw CT 3D NAND flash memory has ignorable degradations in the same dose of ionizing radiation. However, high dose ionizing radiation still cause 3D NAND chip failure, the recovery of the failed chip after annealing at room temperature was also recorded, the underlying. Our results are important for future development of CT flash memories aiming at robust reliabilities.