Comparison of Two Standard Physical Models of GaN HEMTs: MVSG and ASM

In this paper, two standard physics-based compact models of GaN HEMTs, MVSG-RF and ASM-HEMT, are compared. The current voltage (I-V) output characteristics and capacitance voltage (C-V) characteristics of a depletion-mode GaN device with channel length of 0.25 μm, gate width of 125 μm and gate finger of 2 were simulated and compared with experimental data to verify the validity of the two models. From the results, it is observed that both MVSG and ASM accurately model the DC performances of the device, but the model precision of AC characteristics is still insufficient. Finally, Load-Pull simulation is carried out.