Characteristics of argon-ion-implanted amorphous-InGaZnO

We investigated electron transport properties of an argon ion (Ar+) implanted a-IGZO film on glass by Hall measurement combined with wet etching. As a result, we obtained concentration and mobility of electron as a function of depth in the a-IGZO from the surface, and high concentration area in depth distributed deeper compared with one of the argon plasma treated a-IGZO. In addition, we estimated the implanted Ar atom and oxygen vacancy depth-profiles in the a-IGZO. We confirmed Ar stopping powers of a-IGZO and the donor level of 0.05-0.1 eV below bottom of conduction band energy, which can be applied to resistance control technique for a-IGZO device processes.