High Light Power Density DUV-LED Packaging Using High Density TSV in Silicon Cavity and Laser-Glass-Frit-Bonded Glass Cap

This paper reports an improved deep ultraviolet LED (DUV-LED) packaging based on Si MEMS process technology. The Si package (Si-PKG) consists of a cavity formed by Si crystalline anisotropic wet etching and through-silicon vias (TSV) filled with electroplated Cu. The Si-PKG is hermetically sealed by laser local heating of screen-printed glass frit. This technology allows for the use of a DUV-transparent glass substrate, which has an unmatched coefficient of thermal expansion (CTE). Using a high-density array of TSV capped with AuSn solder bumps, the cooling performance of the DUV-LED has been greatly improved. As a result, an optical output of 114% (50 mW) and a volumetric light power density of 380% (14 mW/mm
³
) were recorded compared with the conventional AlN-packaged device. The developed compact low-cost Si-PKG is promising for wider applications of the DUV-LED including the disinfection of the new coronaviruses.