Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

In this article, an efficient numerical algorithm is proposed to capture the thermal profile of AlGaN/GaN high electron mobility transistors (HEMTs) with nonlinear electrothermal coupling effects. The finite element method is employed to solve the steady heat conduction equation with different kinds of boundary conditions. To accurately evaluate the temperature distribution of AlGaN/GaN HEMTs, the temperature-dependent properties of both thermal conductivity and heat source are taken into consideration. In order to accelerate the convergence in simulation, the Anderson acceleration (AA) scheme is utilized to solve the nonlinear coupling problems. Numerical examples demonstrate the high accuracy and excellent convergence of the proposed method for nonlinear thermal analysis of AlGaN/GaN HEMTs.