Investigation of p-GaN/N-Mg₀.₃Zn₀.₇O:In Heterojunction Photodiode for Dual-Band UV-B/UV-A Detection

The p-GaN/N-Mg
_0.3
Zn
_0.7
O:In heterojunction photodiode is demonstrated in this study. The p-type GaN is grown using a hydride vapor phase epitaxy (HVPE) method and the n-type Mg
_0.3
Zn
_0.7
O:In thin film is deposited using a mist atmospheric pressure chemical vapor deposition (MAPCVD) method. The p-GaN/N-Mg
_0.3
Zn
_0.7
O:In photodiode shows a significant rectification ratio of
$2.3 \times 10^{6}$
and high maximum responsivity of 0.93 A/W to UV-B. The significant UV-B to UV-A and UV-A to visible rejection ratios are found in the photodiode, which suggests that the p-GaN/N-Mg
_0.3
Zn
_0.7
O:In photodiode is capable of identifying visible light, UV-A, and UV-B.