A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS

In this paper, a wideband low-noise amplifier (LNA) with a two-fold noise cancellation scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a common-gate input branch to provide wideband input matching. It is followed by two stages of the common-source structure which cancels the noise and distortion of the first and second stages and relaxes the design restriction on the first noise-cancellation stage. The provided circuit-level analysis is verified by simulations. The proposed LNA is fabricated in 28-nm CMOS. It achieves a minimum noise figure (NF) of 2.5dB and input return loss (S₁₁) < −15dB over 0.02–2GHz bandwidth while consuming only 4.1mW from a 1V supply and driving an external 50- $\Omega $ load. The −3dB power gain (S₂₁) is 18.5dB and IIP3 is +4.25dBm.