Characterization of Low-Frequency Noise in Polycrystalline Silicon Thin-Film Transistors under Different Temperature

In this work, the low-frequency (f) noise in polycrystalline silicon thin-film transistors (TFTs) under the environmental temperature of 300 K and 373 K is characterized and analyzed. The behaviors of the low-f noise obey the classical 1/f theory. The carrier number fluctuation model is found to be the dominant mechanism. The density of defect states inside the devices increases from 2.66 × 10¹⁶ cm^–3eV^–1 to 6.66 × 10¹⁷ cm^–3eV^–1 when the substrate temperature increases from 300 K to 373 K. Violent lattice vibration at high temperature may be responsible for degenerated device mobility and increased low-f noise.