A Simplified Model of Tantalum Oxide Based Memristor and Application in Memory Crossbars

In this article an enhanced and simplified alteration of a memristor model based on tantalum oxide is proposed. Its application in hybrid memory crossbars is presented. The suggested model is founded on the classical Hewlett Packard Ta
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memristor model including several main refinements – incorporation of a simple window function, enhancement of its efficiency applying rationalized expression for the current-voltage relation and by substitution of the Heaviside function with continuous and smooth logistic function. The memristor model’s parameters are obtained by collation to tentative current-voltage characteristics and applying procedure for parameters estimation. A LTSpice library model is generated in agreement to the considered memristor model. The modified model of tantalum oxide memristor is tested in a hybrid memory crossbar. After comparison to several basic models the major advantages of the suggested memristor model are demonstrated – better performance, higher speed of operation, improved adjustment process and a sound switching representation.