E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which creates a cascode-like configuration with a D-mode GaN MISHEMT. This E-mode SCFP GaN FEG-HEMT has a positive V
_th
of 2.81 V, a high I
_D,max
of 757mA/mm, and a BV of 866 V. Dynamic R
_ON
reduced 25% when operated at V
_DSQ
= 400 V. ON-state stress tests also show improved current collapse phenomena. Additionally, to address the charge storage abilities of FEG-HEMTs, a multi-cycle OFF-state ( V
_DS
= 300 V, V
_GS
= 0 V) retention test was conducted. The SCFP FEG-HEMT showed 58.46% less V
_th
shift percentage than the FEG-HEMT without field plates.