Two-Dimensional Inverters Based on MoS₂-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method

Two-dimensional (2D) layered materials offer unique opportunities for building novel nanoscale electronics devices. As the family of 2D materials and their heterostructure continue to grow, it is desirable to have a technique capable of quickly prototyping 2D devices for efficient exploration of new materials and devices. Here, we demonstrate a facile all-dry transfer technique that can very efficiently build 2D devices, and show that a digital inverter can be realized using such technique. Our results can be leveraged for building and testing new types of 2D nanodevices with high throughput.