Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

The dual-functional resistive random-access memories (RRAMs) are presented as the nonvolatile switching (NVS) memory and volatile threshold switching (VTS) devices by changing the operation polarities in the identical memory device. The built-in nonlinearity is demonstrated of~10
²
in NVS for the selectorless memristor, and the selectivity is of ~10
³
in volatile switching for the selector device application. The crossbar array of HfO
_x
/graphite stacks is implementing an improved read margin with nonvolatile selectorless unit. In comparison with current memory technology, the dual-functional hybrid selectorless memristor in this work is presented by low thermal budget, high ON- OFF ratio (~10
²
), good self-selectivity in selectorless memory (~10
¹²
), high selectivity in selection device (~10
³
), and low switching voltage for both memory and selection devices. The dual-functional switching behaviors not only provide the effective ways to 3-D integration for storage class memory, but also for emerging computing paradigms such as in-memory computing and neuromorphic computing applications.