Implementation and Parametric Analysis of Memristor Models – Comparative Study

Memristor is a novel parasitic device which is used for several applications such as memories, logic and neuromorphic systems. One of the most attractive properties of the memristive device is the nonvolatility combined with their scalability and compatibility with CMOS. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices. These are based on the pinched hysteresis loop observed in the current-voltage (IV) characteristics. Several models of memristor have been reported in the literature. However, in this study, Linear Ion Drift (LID) model, Simmons Tunnel Barrier (STB) model and the Memristive TEAM model have been implemented and compared on the basis of various parameters such as flexibility, accuracy, existence of threshold and other important characteristics including IV relationship and state variable variation.