Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement

In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V
SD
-T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures.