Silicon avalanche rectifier diodes

These diodes have reverse power dissipation rating equal to their forward rating and represent a new concept in the design of silicon diodes. They have avalanche properties in the reverse direction similar to those of a Zener diode. This type of diffused junction silicon rectifier is especially processed to ensure that the reverse voltage breakdown occurs in the bulk material of the junction and not at one small point on the surface. This arrangement gives the rectifiers the ability to absorb reverse over-voltage transients, and leads to an improved long-term stability in the reverse characteristics. For conventional devices, the peak inverse voltage is one of the characteristics which is susceptible to change, often with disastrous results on the equipment in which it is installed.