A Hybrid Streamline Upwind Finite Volume-Finite Element Method for Semiconductor Continuity Equations

This article presents the construction and analysis of a hybrid numerical method for the discretization of the convection-dominated nonlinear carrier transport process in semiconductor devices. In the construction of the method, the edge streamline upwind (SU) current density model is employed to overcome the nonconvergence brought by the nonlinear property of the current continuity equation, and the mixed finite volume-finite element method (FVFEM) is utilized to effectively extend the edge SU current density model to multidimensional applications. The proposed method is more reliable and flexible than the finite box (FB) method and streamline upwind Petrov–Galerkin (SUPG) method. The performance of several popular SU current density models is compared to find the optimal one. The proposed method is validated by comparing the calculated results with those calculated using commercial software. Based on the streamline upwind-finite volume-finite element method (SU-FVFEM), the finite element method (FEM), and the domain decomposition method (DDM), an in-house parallel computing electrothermal simulator is developed for large-scale semiconductor devices. The performance of the in-house developed parallel simulator is evaluated through simulations of a p-n junction diode and a 3-D bipolar transistor. The results demonstrated that the developed parallel simulator possesses good accuracy, applicability, and scalability.