Monolithic GaAs-based 1.3 /spl mu/m VCSEL directly-modulated at 10 Gb/s

Summary form only given. VCSELs are inherently more cost-effective to manufacture and more efficient than edge emitting diode lasers, as proven by the dominance of 850 nm VCSELs in the very short reach data communications space. This paper introduces a high-speed VCSEL lasing at 1.3 /spl mu/m, enabling similar low-cost solutions for the much longer links in the telecommunications market.