Design of W-Band High Efficient Power Combiner Utilizing Silicon Micromachining

The traditional W-band power combiner is difficult to integrate with other planar circuits due to its large size, which limits its application in small size platforms. In order to solve this problem, the research on high efficiency and miniaturization power combiner is carried out. In this paper, a novel two-way waveguide spatial power combiner structure is proposed. Based on silicon material, using MEMS technology and wafer bonding three-dimensional stacking technology, multi-channel power combining is carried out on silicon substrate to realize high efficiency and miniaturization of W-band power combiner. Greatly improve the machining accuracy, making the overall performance better, smaller size, easier integration. Within the operating band from 90GHz to 96GHz, the return loss is better than 22.5dB, the insertion loss is less than 0.22dB and the simulated result demonstrates an overall combining efficiency of 95%.